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Vishay Siliconix
Automotive
Dual N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V ID (A)Configuration
FEATURES
600.080± 3.7Dual
TrenchFET® Power MOSFET
Package with Low Thermal Resistance
AEC-Q101 RELIABILITY
Passed all AEC-Q101 Reliability Testing Characterization Ongoing
ORDERING INFORMATION
PackageLead (Pb)-freeSnPb
SO-8
SQ9945AEY-T1-E3SQ9945AEY-T1
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Drain-Source Voltage Gate-Source VoltageContinuous Drain Currenta
Continuous Source Current (Diode Conduction)aPulsed Drain Currentb
Single Pulse Avalanche EnergySingle Pulse Avalanche CurrentMaximum Power Dissipationb
Operating Junction and Storage Temperature Range
L = 0.1 mHTC = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C
VDS
LIMIT60- 3.7- 3.22--2.41.7- 55 to + 175
AUNITV
VGS20IDISEAS IASPDTJ, Tstg
IDMmJ AW °C
THERMAL RESISTANCE RATINGS
Junction-to-AmbientJunction-to-Case (Drain)
Notes
a.Package limited.
b.Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.c.When mounted on 1" square PCB (FR-4 material).
PCB Mountc
RthJARthJC
LIMIT--UNIT°C/W
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 74499S-81559-Rev. B, 23-Oct-08
doc.docsou.com
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